? semiconductor components industries, llc, 2006 january, 2006 ? rev. 6 1 publication order number: MMBT5550LT1/d MMBT5550LT1, mmbt5551lt1 preferred device high voltage transistors npn silicon features ? pb?free packages are available maximum ratings rating symbol value unit collector ?emitter voltage mmbt5550 mmbt5551 v ceo 140 160 vdc collector ?base voltage mmbt5550 mmbt5551 v cbo 160 180 vdc emitter ?base voltage v ebo 6.0 vdc collector current ? continuous i c 600 madc electrostatic discharge human body model machine model esd > 8000 > 400 v thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board (note 1) @t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total device dissipation alumina substrate (note 2) @t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. fr?5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. preferred devices are recommended choices for future use and best overall value. marking diagram collector 3 1 base 2 emitter http://onsemi.com 1 x1x m sot?23 (to?236) case 318 style 6 1 2 3 device package shipping ? ordering information MMBT5550LT1 sot?23 3,000 / tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. MMBT5550LT1g sot?23 (pb?free) 3,000 / tape & ree l mmbt5551lt1 sot?23 3,000 / tape & ree l mmbt5551lt1g sot?23 (pb?free) 3,000 / tape & ree l *date code orientation and/or overbar may vary depending upon manufacturing location. x1x = device code m1f = mmbt5550lt g1 = mmbt5551lt m = date code* = pb?free package (note: microdot may be in either location) mmbt5551lt3 sot?23 10,000/tape & ree l mmbt5551lt3g sot?23 (pb?free) 10,000/tape & ree l
MMBT5550LT1, mmbt5551lt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (note 3) (i c = 1.0 madc, i b = 0) mmbt5550 mmbt5551 v (br)ceo 140 160 ? ? vdc collector ?base breakdown voltage (i c = 100 adc, i e = 0) mmbt5550 mmbt5551 v (br)cbo 160 180 ? ? vdc emitter ?base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 ? vdc collector cutoff current (v cb = 100 vdc, i e = 0) mmbt5550 (v cb = 120 vdc, i e = 0) mmbt5551 (v cb = 100 vdc, i e = 0, t a = 100 c) mmbt5550 (v cb = 120 vdc, i e = 0, t a = 100 c) mmbt5551 i cbo ? ? ? ? 100 50 100 50 nadc adc emitter cutoff current (v eb = 4.0 vdc, i c = 0) i ebo ? 50 nadc on characteristics dc current gain (i c = 1.0 madc, v ce = 5.0 vdc) mmbt5550 mmbt5551 (i c = 10 madc, v ce = 5.0 vdc) mmbt5550 mmbt5551 (i c = 50 madc, v ce = 5.0 vdc) mmbt5550 mmbt5551 h fe 60 80 60 80 20 30 ? ? 250 250 ? ? ? collector ?emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) both types (i c = 50 madc, i b = 5.0 madc) mmbt5550 mmbt5551 v ce(sat) ? ? ? 0.15 0.25 0.20 vdc base ?emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) both types (i c = 50 madc, i b = 5.0 madc) mmbt5550 mmbt5551 v be(sat) ? ? ? 1.0 1.2 1.0 vdc collector emitter cut?off (v cb = 10 v) both types (v cb = 75 v) i ces ? ? 50 100 na 3. pulse test: pulse width = 300 s, duty cycle = 2.0%.
MMBT5550LT1, mmbt5551lt1 http://onsemi.com 3 figure 1. dc current gain i c , collector current (ma) 500 h , dc current gain fe t j = 125 c ?55 c 25 c 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 30 20 300 100 50 7.0 v ce = 1.0 v v ce = 5.0 v figure 2. collector saturation region i b , base current (ma) 1.0 i c = 1.0 ma 0 0.3 0.005 0.01 0.2 0.5 1.0 2.0 20 50 0.8 0.5 0.4 0.9 0.7 0.6 0.2 0.02 0.05 0.1 10 v ce , collector?emitter voltage (volts) 0.1 10 ma 30 ma 100 ma 5.0 figure 3. collector cut?off region v be , base?emitter voltage (volts) 10 1 10 ?5 0.4 0.3 0.1 10 0 10 ?1 10 ?2 10 ?3 10 ?4 0.2 0 0.1 0.2 0.4 0.3 0.6 0.5 v ce = 30 v t j = 125 c 75 c 25 c i c = i ces , collector current (a) i c reverse forward i c , collector current (ma) 1.0 v, voltage (volts) 1.0 2.0 5.0 10 20 50 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 0.1 0.2 0.5 figure 4. ?on? voltages 0.8 0.6 0.4 0.2 0 3.0 30 0.3
MMBT5550LT1, mmbt5551lt1 http://onsemi.com 4 c, capacitance (pf) v r , reverse voltage (volts) 100 1.0 0.2 0.5 1.0 2.0 5.0 10 20 c ibo 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3 0.7 3.0 7.0 c obo 10.2 v v in 10 s input pulse v bb ?8.8 v 100 r b 5.1 k 0.25 f v in 100 1n914 v out r c v cc 30 v 3.0 k t r , t f 10 ns duty cycle = 1.0% values shown are for i c @ 10 ma t j = 25 c i c , collector current (ma) 1000 0.3 1.0 10 20 30 50 0.5 0.2 t, time (ns) 10 20 30 50 100 200 300 500 2.0 100 200 i c /i b = 10 t j = 25 c t r @ v cc = 120 v 3.0 5.0 t r @ v cc = 30 v t d @ v eb(off) = 1.0 v v cc = 120 v i c , collector current (ma) 5000 t, time (ns) 50 100 200 300 500 3000 2000 1000 0.3 1.0 10 20 30 50 0.5 0.2 2.0 100 200 3.0 5.0 i c /i b = 10 t j = 25 c t f @ v cc = 120 v t f @ v cc = 30 v t s @ v cc = 120 v i c , collector current (ma) 2.5 vc for v ce(sat) vb for v be(sat) figure 5. temperature coefficients t j = ? 55 c to +135 c v , temperature coefficient (mv/ c) 2.0 1.5 1.0 0.5 0 ? 0.5 ? 1.0 ? 1.5 ? 2.0 ? 2.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 3.0 30 0.3 figure 6. switching time test circuit figure 7. capacitances figure 8. turn?on time figure 9. turn?off time
MMBT5550LT1, mmbt5551lt1 http://onsemi.com 5 package dimensions sot?23 (to?236) case 318?08 issue an d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318?01 thru ?07 and ?09 obsolete, new standard 318?08. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h style 6: pin 1. base 2. emitter 3. collector 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MMBT5550LT1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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